Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes
It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and leads to growth of its structural perfection. The...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2010-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2010/3_2010/pdf/11.zip |