Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes

Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes

It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and leads to growth of its structural perfection. The...

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Bibliographic Details
Main Authors: Vakiv M. M., Krukovskiy S. I., Zayachuk D. M., Mykhashchuk Iu. S., Krukovskiy R. S.
Format: Article
Language:English
Published: Politehperiodika 2010-06-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
epitaxial layer
liquid-phase epitaxy
rare-earth element
isovalent element
alloying
Online Access:http://www.tkea.com.ua/tkea/2010/3_2010/pdf/11.zip
Description
Summary:It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and leads to growth of its structural perfection. The concentration of electrons in InP layers decreases and their mobility increases on optimal amounts of Yb and Al in the melt. This technology may be used in producing structures for Gunn diodes, photoreceivers and other optoelectronic devices.
ISSN:2225-5818

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