Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes
It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and leads to growth of its structural perfection. The...
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Politehperiodika
2010-06-01
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Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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Online Access: | http://www.tkea.com.ua/tkea/2010/3_2010/pdf/11.zip |
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doaj-6edc77f8daeb492589dc36f8a03f90de2020-11-24T21:19:52ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182010-06-0135053Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodesVakiv M. M.Krukovskiy S. I.Zayachuk D. M.Mykhashchuk Iu. S.Krukovskiy R. S.It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and leads to growth of its structural perfection. The concentration of electrons in InP layers decreases and their mobility increases on optimal amounts of Yb and Al in the melt. This technology may be used in producing structures for Gunn diodes, photoreceivers and other optoelectronic devices.http://www.tkea.com.ua/tkea/2010/3_2010/pdf/11.zipepitaxial layerliquid-phase epitaxyrare-earth elementisovalent elementalloying |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Vakiv M. M. Krukovskiy S. I. Zayachuk D. M. Mykhashchuk Iu. S. Krukovskiy R. S. |
spellingShingle |
Vakiv M. M. Krukovskiy S. I. Zayachuk D. M. Mykhashchuk Iu. S. Krukovskiy R. S. Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes Tekhnologiya i Konstruirovanie v Elektronnoi Apparature epitaxial layer liquid-phase epitaxy rare-earth element isovalent element alloying |
author_facet |
Vakiv M. M. Krukovskiy S. I. Zayachuk D. M. Mykhashchuk Iu. S. Krukovskiy R. S. |
author_sort |
Vakiv M. M. |
title |
Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes |
title_short |
Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes |
title_full |
Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes |
title_fullStr |
Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes |
title_full_unstemmed |
Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes |
title_sort |
obtaining of high-quality inp active layers in geterostructure’s composition for gunn diodes |
publisher |
Politehperiodika |
series |
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
issn |
2225-5818 |
publishDate |
2010-06-01 |
description |
It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and leads to growth of its structural perfection. The concentration of electrons in InP layers decreases and their mobility increases on optimal amounts of Yb and Al in the melt. This technology may be used in producing structures for Gunn diodes, photoreceivers and other optoelectronic devices. |
topic |
epitaxial layer liquid-phase epitaxy rare-earth element isovalent element alloying |
url |
http://www.tkea.com.ua/tkea/2010/3_2010/pdf/11.zip |
work_keys_str_mv |
AT vakivmm obtainingofhighqualityinpactivelayersingeterostructurescompositionforgunndiodes AT krukovskiysi obtainingofhighqualityinpactivelayersingeterostructurescompositionforgunndiodes AT zayachukdm obtainingofhighqualityinpactivelayersingeterostructurescompositionforgunndiodes AT mykhashchukius obtainingofhighqualityinpactivelayersingeterostructurescompositionforgunndiodes AT krukovskiyrs obtainingofhighqualityinpactivelayersingeterostructurescompositionforgunndiodes |
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1726004914175344640 |