Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes
It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and leads to growth of its structural perfection. The...
Main Authors: | Vakiv M. M., Krukovskiy S. I., Zayachuk D. M., Mykhashchuk Iu. S., Krukovskiy R. S. |
---|---|
Format: | Article |
Language: | English |
Published: |
Politehperiodika
2010-06-01
|
Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
Subjects: | |
Online Access: | http://www.tkea.com.ua/tkea/2010/3_2010/pdf/11.zip |
Similar Items
-
Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method
by: Vakiv N. M., et al.
Published: (2013-12-01) -
Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD
by: Vakiv N. M., et al.
Published: (2014-06-01) -
Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method
by: Vakiv N. M., et al.
Published: (2012-04-01) -
Crystallization of metamorphic garnet : nucleation mechanisms and yttrium and rare-earth-element uptake
by: Moore, Stephanie Jean
Published: (2014) -
Crystallization of metamorphic garnet : nucleation mechanisms and yttrium and rare-earth-element uptake
by: Moore, Stephanie Jean
Published: (2014)