Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy

Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy

Abstract In this study, defect-free zinc blende GaAs nanowires on Si (111) by molecular beam epitaxy (MBE) growth are systematically studied through Au-assisted vapor-liquid-solid (VLS) method. The morphology, density, and crystal structure of GaAs nanowires were investigated as a function of substr...

Full description

Bibliographic Details
Main Authors: Chiu-Yen Wang, Yu-Chen Hong, Zong-Jie Ko, Ya-Wen Su, Jin-Hua Huang
Format: Article
Language:English
Published: SpringerOpen 2017-04-01
Series:Nanoscale Research Letters
Subjects:
Nanowire
Molecular beam epitaxy (MBE)
GaAs
Vapor-liquid-solid (VLS)
Online Access:http://link.springer.com/article/10.1186/s11671-017-2063-3

Internet

http://link.springer.com/article/10.1186/s11671-017-2063-3

Similar Items