Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy
Abstract In this study, defect-free zinc blende GaAs nanowires on Si (111) by molecular beam epitaxy (MBE) growth are systematically studied through Au-assisted vapor-liquid-solid (VLS) method. The morphology, density, and crystal structure of GaAs nanowires were investigated as a function of substr...
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doaj-6f23a844577e4c359130d5237ec494f52020-11-24T21:14:33ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-04-011211810.1186/s11671-017-2063-3Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam EpitaxyChiu-Yen Wang0Yu-Chen Hong1Zong-Jie Ko2Ya-Wen Su3Jin-Hua Huang4Department of Materials Science and Engineering, National Taiwan University of Science and TechnologyDepartment of Materials Science and Engineering, National Taiwan University of Science and TechnologyDepartment of Materials Science and Engineering, National Tsing Hua UniversityNational Nano Device LaboratoriesDepartment of Materials Science and Engineering, National Tsing Hua UniversityAbstract In this study, defect-free zinc blende GaAs nanowires on Si (111) by molecular beam epitaxy (MBE) growth are systematically studied through Au-assisted vapor-liquid-solid (VLS) method. The morphology, density, and crystal structure of GaAs nanowires were investigated as a function of substrate temperature, growth time, and As/Ga flux ratio during MBE growth, as well as the thickness, annealing time, and annealing temperature of Au film using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), cathodoluminescence (CL), and Raman spectroscopy. When the As/Ga flux ratio is fixed at 25 and the growth temperature at 540 °C, the GaAs nanowires exhibit a defect-free zinc blende structure with uniform and straight morphology. According to the characteristics of GaAs nanowires grown under varied conditions, a growth mechanism for defect-free zinc blende GaAs nanowires via Au-assisted vapor-liquid-solid (VLS) method is proposed. Finally, doping by Si and Be of nanowires is investigated. The results of doping lead to GaAs nanowires processing n-type and p-type semiconductor properties and reduced electrical resistivity. This study of defect-free zinc blende GaAs nanowire growth should be of assistance in further growth and applications studies of complex III-V group nanostructures.http://link.springer.com/article/10.1186/s11671-017-2063-3NanowireMolecular beam epitaxy (MBE)GaAsVapor-liquid-solid (VLS) |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Chiu-Yen Wang Yu-Chen Hong Zong-Jie Ko Ya-Wen Su Jin-Hua Huang |
spellingShingle |
Chiu-Yen Wang Yu-Chen Hong Zong-Jie Ko Ya-Wen Su Jin-Hua Huang Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy Nanoscale Research Letters Nanowire Molecular beam epitaxy (MBE) GaAs Vapor-liquid-solid (VLS) |
author_facet |
Chiu-Yen Wang Yu-Chen Hong Zong-Jie Ko Ya-Wen Su Jin-Hua Huang |
author_sort |
Chiu-Yen Wang |
title |
Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy |
title_short |
Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy |
title_full |
Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy |
title_fullStr |
Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy |
title_full_unstemmed |
Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy |
title_sort |
electrical and optical properties of au-catalyzed gaas nanowires grown on si (111) substrate by molecular beam epitaxy |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1931-7573 1556-276X |
publishDate |
2017-04-01 |
description |
Abstract In this study, defect-free zinc blende GaAs nanowires on Si (111) by molecular beam epitaxy (MBE) growth are systematically studied through Au-assisted vapor-liquid-solid (VLS) method. The morphology, density, and crystal structure of GaAs nanowires were investigated as a function of substrate temperature, growth time, and As/Ga flux ratio during MBE growth, as well as the thickness, annealing time, and annealing temperature of Au film using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), cathodoluminescence (CL), and Raman spectroscopy. When the As/Ga flux ratio is fixed at 25 and the growth temperature at 540 °C, the GaAs nanowires exhibit a defect-free zinc blende structure with uniform and straight morphology. According to the characteristics of GaAs nanowires grown under varied conditions, a growth mechanism for defect-free zinc blende GaAs nanowires via Au-assisted vapor-liquid-solid (VLS) method is proposed. Finally, doping by Si and Be of nanowires is investigated. The results of doping lead to GaAs nanowires processing n-type and p-type semiconductor properties and reduced electrical resistivity. This study of defect-free zinc blende GaAs nanowire growth should be of assistance in further growth and applications studies of complex III-V group nanostructures. |
topic |
Nanowire Molecular beam epitaxy (MBE) GaAs Vapor-liquid-solid (VLS) |
url |
http://link.springer.com/article/10.1186/s11671-017-2063-3 |
work_keys_str_mv |
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1716746776180948992 |