Development of Micron Sized Photonic Devices Based on Deep GaN Etching
In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate performances. In our reported research activity, dry e...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-03-01
|
| Series: | Photonics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6732/8/3/68 |