All-Aluminum Thin Film Transistor Fabrication at Room Temperature

All-Aluminum Thin Film Transistor Fabrication at Room Temperature

Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al2O3) insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO) conductive layer, as one AZO/Al2O3 heterojunction unit. The meas...

Full description

Bibliographic Details
Main Authors: Rihui Yao, Zeke Zheng, Yong Zeng, Xianzhe Liu, Honglong Ning, Shiben Hu, Ruiqiang Tao, Jianqiu Chen, Wei Cai, Miao Xu, Lei Wang, Linfeng Lan, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2017-02-01
Series:Materials
Subjects:
thin film transistor
conductor/insulator heterojunction
all-aluminum
room temperature
Online Access:http://www.mdpi.com/1996-1944/10/3/222

Internet

http://www.mdpi.com/1996-1944/10/3/222

Similar Items