Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics
In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S), Al/HfO2/SiO2/Si (H), and Al/3HfO2/SiO2/Si (3H) were examined. The significant observation of electron traps of sample H compares to sample S is found...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4871407 |