Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the flexible normally-off HEMT. By testing the out...

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Bibliographic Details
Main Authors: Runze Lin, Desheng Zhao, Guohao Yu, Xiaoyan Liu, Dongdong Wu, Erdan Gu, Xugao Cui, Ran Liu, Baoshun Zhang, Pengfei Tian
Format: Article
Language:English
Published: AIP Publishing LLC 2020-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0025587

Internet

http://dx.doi.org/10.1063/5.0025587

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