Publisher’s Note: “Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes” [AIP Advances 8, 015005 (2018)]
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5030116 |