Effect of sulfur doping on the dielectric properties of Sb2Se3 system
In this paper, we report the effect of sulfur doping on the electrical and dielectric properties of semiconducting Sb2Se2S over wide ranges of temperatures (298–473K) and frequencies (42–106Hz). Sb2Se2S system has been prepared by the direct fusion and cooling cycle of a mixture of the constituent e...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
World Scientific Publishing
2019-02-01
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Series: | Journal of Advanced Dielectrics |
Subjects: | |
Online Access: | http://www.worldscientific.com/doi/pdf/10.1142/S2010135X19500012 |