Effect of sulfur doping on the dielectric properties of Sb2Se3 system

In this paper, we report the effect of sulfur doping on the electrical and dielectric properties of semiconducting Sb2Se2S over wide ranges of temperatures (298–473K) and frequencies (42–106Hz). Sb2Se2S system has been prepared by the direct fusion and cooling cycle of a mixture of the constituent e...

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Bibliographic Details
Main Authors: Ragab Mahani, E. A. El-Sayad
Format: Article
Language:English
Published: World Scientific Publishing 2019-02-01
Series:Journal of Advanced Dielectrics
Subjects:
Online Access:http://www.worldscientific.com/doi/pdf/10.1142/S2010135X19500012