High Brightness GaN-on-Si Based Blue LEDs Grown on 150 mm Si Substrates Using Thin Buffer Layer Technology
The commercial adoption of GaN-on-Si light emitting diode (LED) chip technology is lagging behind incumbent sapphire substrates due to significantly longer growth time and poorer crystalline quality. To address these challenges, we report on the growth of high-quality crack-free InGaN/GaN LED struct...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2015-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7174951/ |