High Brightness GaN-on-Si Based Blue LEDs Grown on 150 mm Si Substrates Using Thin Buffer Layer Technology

High Brightness GaN-on-Si Based Blue LEDs Grown on 150 mm Si Substrates Using Thin Buffer Layer Technology

The commercial adoption of GaN-on-Si light emitting diode (LED) chip technology is lagging behind incumbent sapphire substrates due to significantly longer growth time and poorer crystalline quality. To address these challenges, we report on the growth of high-quality crack-free InGaN/GaN LED struct...

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Bibliographic Details
Main Authors: Liyang Zhang, Wei-Sin Tan, Simon Westwater, Antoine Pujol, Andrea Pinos, Samir Mezouari, Kevin Stribley, John Whiteman, John Shannon, Keith Strickland
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Light-emitting diodes (LEDs)
GaN-on-Si
MOCVD
Online Access:https://ieeexplore.ieee.org/document/7174951/

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