Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology. In addition, silicon-germanium (SiGe) engineering is shown to improve the performance of TFET-based ESD protection devices. In this paper, a ne...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-12-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/9/12/657 |