Experimental and simulation studies of radiation‐induced single event burnout in SiC‐based power MOSFETs
Abstract The single event burnout (SEB) effects of SiC power MOSFET are investigated by irradiations. An SEB is observed when drain biased above 400 V for 181Ta ion irradiation. The failure analysis shows a melting “hole” near the gate region due to the thermal runaway. Based on TCAD simulations, th...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-07-01
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| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12147 |