W‐Band MMIC chipset in 0.1‐μm mHEMT technology

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/...

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Bibliographic Details
Main Authors: Jong‐Min Lee, Woo‐Jin Chang, Dong Min Kang, Byoung‐Gue Min, Hyung Sup Yoon, Sung‐Jae Chang, Hyun‐Wook Jung, Wansik Kim, Jooyong Jung, Jongpil Kim, Mihui Seo, Sosu Kim
Format: Article
Language:English
Published: Electronics and Telecommunications Research Institute (ETRI) 2020-08-01
Series:ETRI Journal
Subjects:
frequency multiplier
image‐rejection mixer
lna
mhemt
mmic
Online Access:https://doi.org/10.4218/etrij.2020-0120

Internet

https://doi.org/10.4218/etrij.2020-0120

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