The I-V Characteristic Prediction of BCD LV pMOSFET Devices Based on an ANFIS-Based Methodology
Comprehensive and predictive modeling of submicron devices using the traditional TCAD EDA tools of device simulation has become increasingly perplexing due to a lack of reliable models and difficulties in calibrating available device models. This paper proposes a new technique to model BCD submicron...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2015-01-01
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| Series: | Advances in Fuzzy Systems |
| Online Access: | http://dx.doi.org/10.1155/2015/824524 |