A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links

A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links

We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channel...

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Bibliographic Details
Main Authors: Stavros Giannakopoulos, Ilias Sourikopoulos, Leontios Stampoulidis, Pylyp Ostrovskyy, Florian Teply, K. Tittelbach-Helmrich, Goran Panic, Gunter Fischer, Alexander Grabowski, Herbert Zirath, Philippe Ayzac, Norbert Venet, Anaëlle Maho, Michel Sotom, Shaun Jones, Grahame Wood, Ian Oxtoby
Format: Article
Language:English
Published: Frontiers Media S.A. 2021-05-01
Series:Frontiers in Physics
Subjects:
very high throughput satellites
photonic payloads
optical interconnects
optical transceivers
VCSEL
photodiode
Online Access:https://www.frontiersin.org/articles/10.3389/fphy.2021.672941/full

Internet

https://www.frontiersin.org/articles/10.3389/fphy.2021.672941/full

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