A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links
We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channel...
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2021-05-01
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doaj-72880577c2644ab5bc600a41f9a68a362021-05-17T06:21:54ZengFrontiers Media S.A.Frontiers in Physics2296-424X2021-05-01910.3389/fphy.2021.672941672941A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite LinksStavros Giannakopoulos0Stavros Giannakopoulos1Ilias Sourikopoulos2Leontios Stampoulidis3Pylyp Ostrovskyy4Florian Teply5K. Tittelbach-Helmrich6Goran Panic7Gunter Fischer8Alexander Grabowski9Herbert Zirath10Philippe Ayzac11Norbert Venet12Anaëlle Maho13Michel Sotom14Shaun Jones15Grahame Wood16Ian Oxtoby17LEO Space Photonics R&D, Athens, GreeceMicrowave Electronics Laboratory, Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Gothenburg, SwedenLEO Space Photonics R&D, Athens, GreeceLEO Space Photonics R&D, Athens, GreeceIHP - Leibniz-Institut für innovative Mikroelektronik, Frankfurt, GermanyIHP - Leibniz-Institut für innovative Mikroelektronik, Frankfurt, GermanyIHP - Leibniz-Institut für innovative Mikroelektronik, Frankfurt, GermanyIHP - Leibniz-Institut für innovative Mikroelektronik, Frankfurt, GermanyIHP - Leibniz-Institut für innovative Mikroelektronik, Frankfurt, GermanyPhotonics Laboratory, Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Gothenburg, SwedenMicrowave Electronics Laboratory, Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Gothenburg, SwedenThales Alenia Space, Toulouse, FranceThales Alenia Space, Toulouse, FranceThales Alenia Space, Toulouse, FranceThales Alenia Space, Toulouse, FranceALTER TECHNOLOGY TÜV NORD UK Ltd., Livingston, United KingdomALTER TECHNOLOGY TÜV NORD UK Ltd., Livingston, United KingdomALTER TECHNOLOGY TÜV NORD UK Ltd., Livingston, United KingdomWe report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channels per die, which are adapted for a flip-chip assembly into a mid-board optics (MBO) optical transceiver module. The ICs are designed in the IHP 130 nm SiGe BiCMOS process (SG13RH) leveraging proven robustness in radiation environments and high-speed performance featuring bipolar transistors (HBTs) with fT/fMAX values of up to 250/340 GHz. Besides hardening by technology, radiation-hardened-by-design (RHBD) components are used, including enclosed layout transistors (ELTs) and digital logic cells. We report design features of the ICs and the module, and provide performance data from post-layout simulations. We present radiation evaluation data on analog devices and digital cells, which indicate that the transceiver ICs will reliably operate at typical total ionizing dose (TID) levels and single event latch-up thresholds found in geostationary satellites.https://www.frontiersin.org/articles/10.3389/fphy.2021.672941/fullvery high throughput satellitesphotonic payloadsoptical interconnectsoptical transceiversVCSELphotodiode |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Stavros Giannakopoulos Stavros Giannakopoulos Ilias Sourikopoulos Leontios Stampoulidis Pylyp Ostrovskyy Florian Teply K. Tittelbach-Helmrich Goran Panic Gunter Fischer Alexander Grabowski Herbert Zirath Philippe Ayzac Norbert Venet Anaëlle Maho Michel Sotom Shaun Jones Grahame Wood Ian Oxtoby |
spellingShingle |
Stavros Giannakopoulos Stavros Giannakopoulos Ilias Sourikopoulos Leontios Stampoulidis Pylyp Ostrovskyy Florian Teply K. Tittelbach-Helmrich Goran Panic Gunter Fischer Alexander Grabowski Herbert Zirath Philippe Ayzac Norbert Venet Anaëlle Maho Michel Sotom Shaun Jones Grahame Wood Ian Oxtoby A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links Frontiers in Physics very high throughput satellites photonic payloads optical interconnects optical transceivers VCSEL photodiode |
author_facet |
Stavros Giannakopoulos Stavros Giannakopoulos Ilias Sourikopoulos Leontios Stampoulidis Pylyp Ostrovskyy Florian Teply K. Tittelbach-Helmrich Goran Panic Gunter Fischer Alexander Grabowski Herbert Zirath Philippe Ayzac Norbert Venet Anaëlle Maho Michel Sotom Shaun Jones Grahame Wood Ian Oxtoby |
author_sort |
Stavros Giannakopoulos |
title |
A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links |
title_short |
A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links |
title_full |
A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links |
title_fullStr |
A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links |
title_full_unstemmed |
A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links |
title_sort |
112 gb/s radiation-hardened mid-board optical transceiver in 130-nm sige bicmos for intra-satellite links |
publisher |
Frontiers Media S.A. |
series |
Frontiers in Physics |
issn |
2296-424X |
publishDate |
2021-05-01 |
description |
We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channels per die, which are adapted for a flip-chip assembly into a mid-board optics (MBO) optical transceiver module. The ICs are designed in the IHP 130 nm SiGe BiCMOS process (SG13RH) leveraging proven robustness in radiation environments and high-speed performance featuring bipolar transistors (HBTs) with fT/fMAX values of up to 250/340 GHz. Besides hardening by technology, radiation-hardened-by-design (RHBD) components are used, including enclosed layout transistors (ELTs) and digital logic cells. We report design features of the ICs and the module, and provide performance data from post-layout simulations. We present radiation evaluation data on analog devices and digital cells, which indicate that the transceiver ICs will reliably operate at typical total ionizing dose (TID) levels and single event latch-up thresholds found in geostationary satellites. |
topic |
very high throughput satellites photonic payloads optical interconnects optical transceivers VCSEL photodiode |
url |
https://www.frontiersin.org/articles/10.3389/fphy.2021.672941/full |
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