Structural and optical characteristics of Sn-doped CuGaSe2 thin films as a new intermediate band material for high-efficiency solar cells

In this research, a new intermediate band (IB) material Sn-doped CuGaSe2 was synthesized for light absorbing layers of high-efficiency solar cells via ball milling. The experimental investigation indicated that element Sn can be successfully doped in the chalcopyrite CuGaSe2 sample, which enhanced t...

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Bibliographic Details
Main Authors: Wenliang Fan, Haiyan Yao, Yanlai Wang, Qingyan Li
Format: Article
Language:English
Published: AIP Publishing LLC 2020-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0007594