Structural and optical characteristics of Sn-doped CuGaSe2 thin films as a new intermediate band material for high-efficiency solar cells
In this research, a new intermediate band (IB) material Sn-doped CuGaSe2 was synthesized for light absorbing layers of high-efficiency solar cells via ball milling. The experimental investigation indicated that element Sn can be successfully doped in the chalcopyrite CuGaSe2 sample, which enhanced t...
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doaj-729e242ab1b24539ab833a28460cff6d2020-11-25T03:15:02ZengAIP Publishing LLCAIP Advances2158-32262020-06-01106065031065031-610.1063/5.0007594Structural and optical characteristics of Sn-doped CuGaSe2 thin films as a new intermediate band material for high-efficiency solar cellsWenliang Fan0Haiyan Yao1Yanlai Wang2Qingyan Li3Ordos Institute of Technology, Ordos 017000, ChinaOrdos Institute of Technology, Ordos 017000, ChinaKey Laboratory of Semiconductor Photovoltaic Technology of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, ChinaKey Laboratory of Semiconductor Photovoltaic Technology of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, ChinaIn this research, a new intermediate band (IB) material Sn-doped CuGaSe2 was synthesized for light absorbing layers of high-efficiency solar cells via ball milling. The experimental investigation indicated that element Sn can be successfully doped in the chalcopyrite CuGaSe2 sample, which enhanced the absorption spectrum significantly in the range of visible and near-infrared light wavelength (500 nm–900 nm). With the increase in the content of Sn, the optical bandgap of CuGa1−xSnxSe2 thin films was tuned from 1.65 eV to 1.41 eV for the doping content x from 0.00 to 0.06. The above results proved that the IB was introduced into the CuGa1−xSnxSe2 thin films, and due to the IB existence, this material leads to lower-energy photo absorption (with energy hν ≤ 1.68 eV). Moreover, the presence of Sn4+ in the host material was testified by x-ray photoelectron spectroscopy. Element composition and mapping analysis further confirmed that the fabricated film is composed of Cu, Ga, Sn, and S, and all elements have a homogeneous distribution without partial aggregation. Photoelectric investigations of the Sn–CuGaSe2 indicated that it is a desirable and promising IB material, which could be another candidate for light absorption layers of high-efficiency solar cells.http://dx.doi.org/10.1063/5.0007594 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Wenliang Fan Haiyan Yao Yanlai Wang Qingyan Li |
spellingShingle |
Wenliang Fan Haiyan Yao Yanlai Wang Qingyan Li Structural and optical characteristics of Sn-doped CuGaSe2 thin films as a new intermediate band material for high-efficiency solar cells AIP Advances |
author_facet |
Wenliang Fan Haiyan Yao Yanlai Wang Qingyan Li |
author_sort |
Wenliang Fan |
title |
Structural and optical characteristics of Sn-doped CuGaSe2 thin films as a new intermediate band material for high-efficiency solar cells |
title_short |
Structural and optical characteristics of Sn-doped CuGaSe2 thin films as a new intermediate band material for high-efficiency solar cells |
title_full |
Structural and optical characteristics of Sn-doped CuGaSe2 thin films as a new intermediate band material for high-efficiency solar cells |
title_fullStr |
Structural and optical characteristics of Sn-doped CuGaSe2 thin films as a new intermediate band material for high-efficiency solar cells |
title_full_unstemmed |
Structural and optical characteristics of Sn-doped CuGaSe2 thin films as a new intermediate band material for high-efficiency solar cells |
title_sort |
structural and optical characteristics of sn-doped cugase2 thin films as a new intermediate band material for high-efficiency solar cells |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2020-06-01 |
description |
In this research, a new intermediate band (IB) material Sn-doped CuGaSe2 was synthesized for light absorbing layers of high-efficiency solar cells via ball milling. The experimental investigation indicated that element Sn can be successfully doped in the chalcopyrite CuGaSe2 sample, which enhanced the absorption spectrum significantly in the range of visible and near-infrared light wavelength (500 nm–900 nm). With the increase in the content of Sn, the optical bandgap of CuGa1−xSnxSe2 thin films was tuned from 1.65 eV to 1.41 eV for the doping content x from 0.00 to 0.06. The above results proved that the IB was introduced into the CuGa1−xSnxSe2 thin films, and due to the IB existence, this material leads to lower-energy photo absorption (with energy hν ≤ 1.68 eV). Moreover, the presence of Sn4+ in the host material was testified by x-ray photoelectron spectroscopy. Element composition and mapping analysis further confirmed that the fabricated film is composed of Cu, Ga, Sn, and S, and all elements have a homogeneous distribution without partial aggregation. Photoelectric investigations of the Sn–CuGaSe2 indicated that it is a desirable and promising IB material, which could be another candidate for light absorption layers of high-efficiency solar cells. |
url |
http://dx.doi.org/10.1063/5.0007594 |
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