Si and Sn doping of ε-Ga2O3 layers
Low resistivity n-type ε-Ga2O3 epilayers were obtained for the first time either by adding silane to the gas phase during the metal organic vapour phase epitaxy deposition or by diffusing Sn in nominally undoped layers after the growth. The highest doping concentrations were few 1018 cm−3 and about...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5050982 |