A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application
Despite the continuous downscaling of complementary metal–oxide–semiconductor (CMOS) devices, various scenarios of technology have also been proposed toward the shrinking of semiconductor memory. In this paper, a high-density memory (HDM) has been proposed on the basis of band-to-band tunneling (BTB...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-08-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/16/1954 |