Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2/MoTe2 Heterostructures

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2/MoTe2 Heterostructures

Abstract Manipulation of Ohmic contacts in 2D transition metal dichalcogenides for enhancing the transport properties and enabling its application as a practical device has been a long‐sought goal. In this study, n‐type tungsten disulfide (WS2) single atomic layer to improve the Ohmic contacts of th...

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Bibliographic Details
Main Authors: Jihoon Kim, A. Venkatesan, Hanul Kim, Yewon Kim, Dongmok Whang, Gil‐Ho Kim
Format: Article
Language:English
Published: Wiley 2021-06-01
Series:Advanced Science
Subjects:
contact resistance
monolayer
tunneling
vdW heterostructures
WS2/MoTe2
Online Access:https://doi.org/10.1002/advs.202100102

Internet

https://doi.org/10.1002/advs.202100102

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