Memory and Spin Injection Devices Involving Half Metals

We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do...

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Bibliographic Details
Main Authors: M. Shaughnessy, Ryan Snow, L. Damewood, C. Y. Fong
Format: Article
Language:English
Published: Hindawi Limited 2011-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2011/140805