XPS Analysis of AuGeNi/Cleaved GaAs(110) Interface
The depth composition of the thin layer alloy, AuGeNi, devoted to acting as an ohmic contact on n-GaAs(110) has been investigated by in situ XPS combined with Argon ion sputtering techniques. The fresh cleaved surfaces, supposed to be free of oxygen, were usually deposited with a 200 nm metallic lay...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2016-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2016/7574526 |