Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p<sup>+</sup>n<sup>−</sup>n Diodes: The Road to Reliable Vertical MOSFETs

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p<sup>+</sup>n<sup>−</sup>n Diodes: The Road to Reliable Vertical MOSFETs

This work investigates p<sup>+</sup>n<sup>−</sup>n GaN-on-Si vertical structures, through dedicated measurements and TCAD simulations, with the ultimate goal of identifying possible strategies for leakage and breakdown optimization. First, the dominant leakage processes were...

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Bibliographic Details
Main Authors: Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Micromachines
Subjects:
semi-vertical
vertical
GaN
pn diodes
leakage modeling
device modeling
Online Access:https://www.mdpi.com/2072-666X/12/4/445

Internet

https://www.mdpi.com/2072-666X/12/4/445

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