Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer

Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer

We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED). The indium composition of the p-InGaN layer decreased from...

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Bibliographic Details
Main Authors: Quanbin Zhou, Hong Wang, Mingsheng Xu, Xi-Chun Zhang
Format: Article
Language:English
Published: MDPI AG 2018-07-01
Series:Nanomaterials
Subjects:
p-type InGaN
graded indium composition
hole injection
quantum efficiency
green LED
Online Access:http://www.mdpi.com/2079-4991/8/7/512

Internet

http://www.mdpi.com/2079-4991/8/7/512

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