Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

Abstract For newly developed semiconductors, obtaining high‐performance transistors and identifying carrier mobility have been hot and important issues. Here, large‐area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations are reported. The enhance...

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Bibliographic Details
Main Authors: Changdong Chen, Bo‐Ru Yang, Gongtan Li, Hang Zhou, Bolong Huang, Qian Wu, Runze Zhan, Yong‐Young Noh, Takeo Minari, Shengdong Zhang, Shaozhi Deng, Henning Sirringhaus, Chuan Liu
Format: Article
Language:English
Published: Wiley 2019-04-01
Series:Advanced Science
Subjects:
carrier mobility
doping
four‐probe measurement
surface potential scanning
thin‐film transistors
Online Access:https://doi.org/10.1002/advs.201801189

Internet

https://doi.org/10.1002/advs.201801189

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