Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors
Abstract For newly developed semiconductors, obtaining high‐performance transistors and identifying carrier mobility have been hot and important issues. Here, large‐area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations are reported. The enhance...
Main Authors: | Changdong Chen, Bo‐Ru Yang, Gongtan Li, Hang Zhou, Bolong Huang, Qian Wu, Runze Zhan, Yong‐Young Noh, Takeo Minari, Shengdong Zhang, Shaozhi Deng, Henning Sirringhaus, Chuan Liu |
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Format: | Article |
Language: | English |
Published: |
Wiley
2019-04-01
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Series: | Advanced Science |
Subjects: | |
Online Access: | https://doi.org/10.1002/advs.201801189 |
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