Online Degradation State Assessment Methodology for Multi-Mode Failures of Insulated Gate Bipolar Transistor

Insulated-gate bipolar transistors (IGBTs) are one of the most vulnerable components that account for a significant fraction of inverter and converter failures. This paper conducts a degradation analysis of IGBTs using run-to-failure measurements. Online assessment of the degradation state of IGBTs...

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Bibliographic Details
Main Authors: Xiangxiang Liu, Lingling Li, Diganta Das, Ijaz Haider Naqvi, Michael G. Pecht
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
MD
SOM
Online Access:https://ieeexplore.ieee.org/document/9050802/