Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
Fe distributions were simulated by using impurity-to-efficiency simulator for the analysis of phosphorus diffusion gettering and confirmed the dependencies of the electron lifetime on the various gettering conditions. It was observed that iron atoms in the Si wafer could be more efficiently gettered...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/313904 |