Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin Films

Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin Films

Cu(In,Ga)Se<sub>2</sub> (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing unde...

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Bibliographic Details
Main Authors: Deewakar Poudel, Benjamin Belfore, Tasnuva Ashrafee, Shankar Karki, Grace Rajan, Angus Rockett, Sylvain Marsillac
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Materials
Subjects:
copper indium gallium selenide
post-deposition treatment
recrystallization
indium bromide
Online Access:https://www.mdpi.com/1996-1944/14/13/3596

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https://www.mdpi.com/1996-1944/14/13/3596

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