Charge carrier concentration optimization of thermoelectric p-type half-Heusler compounds
The carrier concentration in the p-type half-Heusler compound Ti0.3Zr0.35Hf0.35CoSb1−xSnx was optimized, which is a fundamental approach to enhance the performance of thermoelectric materials. The optimum carrier concentration is reached with a substitution level x = 0.15 of Sn, which yields the max...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-04-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4916526 |