Low-Temperature Epitaxial Growth of AlN Thin Films on a Mo Electrode/Sapphire Substrate Using Reactive Sputtering
High-crystalline aluminum nitride (AlN) thin films are essential for device applications, and epitaxial growth is a promising approach to improve their crystalline quality. However, a high substrate temperature is usually required for the epitaxial growth, which is not compatible with the complement...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-04-01
|
| Series: | Coatings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-6412/11/4/443 |