Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs With Al Reacted Source/Drain

Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs With Al Reacted Source/Drain

A self-aligned fabrication process for top-gate amorphous indium-zinc-oxide (a-IZO) thin-film transistors (TFTs) is demonstrated. Aluminum (Al) thermal treatment is employed to dope the a-IZO layer and thus form the self-aligned source/drain regions. The results show that the sheet resistance of the...

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Bibliographic Details
Main Authors: Ting Liang, Yang Shao, Huiling Lu, Xiaoliang Zhou, Xuan Deng, Shengdong Zhang
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Amorphous indium-zinc-oxide (a-IZO)
self-aligned
top-gate
aluminum reaction
Online Access:https://ieeexplore.ieee.org/document/8360021/

Internet

https://ieeexplore.ieee.org/document/8360021/

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