Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates

Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates

<p>Abstract</p> <p>The morphology and transition thickness (<it>t</it> <sub>c</sub>) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientatio...

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Bibliographic Details
Main Authors: Wang Lu, Li Meicheng, Xiong Min, Zhao Liancheng
Format: Article
Language:English
Published: SpringerOpen 2009-01-01
Series:Nanoscale Research Letters
Subjects:
InAs
Transition thickness
High miller index
Strain
Interfacial bonds
Online Access:http://dx.doi.org/10.1007/s11671-009-9304-z

Internet

http://dx.doi.org/10.1007/s11671-009-9304-z

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