Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
<p>Abstract</p> <p>The morphology and transition thickness (<it>t</it> <sub>c</sub>) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientatio...
Main Authors: | Wang Lu, Li Meicheng, Xiong Min, Zhao Liancheng |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2009-01-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://dx.doi.org/10.1007/s11671-009-9304-z |
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