In-Situ Annealing and Hydrogen Irradiation of Defect-Enhanced Germanium Quantum Dot Light Sources on Silicon

In-Situ Annealing and Hydrogen Irradiation of Defect-Enhanced Germanium Quantum Dot Light Sources on Silicon

While light-emitting nanostructures composed of group-IV materials fulfil the mandatory compatibility with CMOS-fabrication methods, factors such as the structural stability of the nanostructures upon thermal annealing, and the ensuing photoluminescence (PL) emission properties, are of key relevance...

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Bibliographic Details
Main Authors: Lukas Spindlberger, Johannes Aberl, Antonio Polimeni, Jeffrey Schuster, Julian Hörschläger, Tia Truglas, Heiko Groiss, Friedrich Schäffler, Thomas Fromherz, Moritz Brehm
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Crystals
Subjects:
germanium
hydrogen
quantum dots
molecular beam epitaxy
defect engineering
silicon
Online Access:https://www.mdpi.com/2073-4352/10/5/351

Internet

https://www.mdpi.com/2073-4352/10/5/351

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