Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor
We investigated the effects of top gate voltage (VTG) and temperature (in the range of 25 to 70 oC) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of VTG from -20V to +20V, decreases the threshold v...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4922005 |