The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature
We have fabricated the heavily Ga-doped layer in Ge single crystal by the implantation and rapid thermal annealing method. The samples show a crossover from the insulating to the superconducting behavior as the annealing temperature increases. Transport measurements suggest that the superconductivit...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/963768 |