The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature
We have fabricated the heavily Ga-doped layer in Ge single crystal by the implantation and rapid thermal annealing method. The samples show a crossover from the insulating to the superconducting behavior as the annealing temperature increases. Transport measurements suggest that the superconductivit...
Main Authors: | Y. B. Sun, Z. F. Di, T. Hu, X. M. Xie |
---|---|
Format: | Article |
Language: | English |
Published: |
Hindawi Limited
2015-01-01
|
Series: | Advances in Condensed Matter Physics |
Online Access: | http://dx.doi.org/10.1155/2015/963768 |
Similar Items
-
Electronic properties of doped Mott insulators and high temperature superconductors
by: Ribeiro, Tiago Castro
Published: (2006) -
Suppression of the antiferromagnetic pseudogap in the electron-doped high-temperature superconductor by protect annealing
by: M. Horio, et al.
Published: (2016-02-01) -
Holographic s+p insulator/superconductor phase transition at zero temperature
by: Ran Li, et al.
Published: (2017-03-01) -
The Growth of Un-doped and Ge-doped AgGaS2 Single Crystals by Vertical Bridgman Method
by: Yi-Hung Ku, et al.
Published: (1994) -
Film-thickness-driven superconductor to insulator transition in cuprate superconductors
by: Han-Byul Jang, et al.
Published: (2020-02-01)