The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

Solution-processed indium oxide is an ideal transparent semiconductor material with wide band gap. Zirconium is an element characterized by a strong binding ability to oxygen which can inhibit the formation of oxygen vacancies and reduce the surface defect state. In this paper, zirconium doped indiu...

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Bibliographic Details
Main Authors: Jingying Zhang, Xiao Fu, Shangxiong Zhou, Honglong Ning, Yiping Wang, Dong Guo, Wei Cai, Zhihao Liang, Rihui Yao, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Coatings
Subjects:
solution process
indium oxide
zirconium doping
oxygen vacancies
Online Access:https://www.mdpi.com/2079-6412/9/7/426

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https://www.mdpi.com/2079-6412/9/7/426

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