Tunable Luminescent A-SiN<sub>x</sub>O<sub>y</sub> Films with High Internal Quantum Efficiency and Fast Radiative Recombination Rates

Tunable Luminescent A-SiN<sub>x</sub>O<sub>y</sub> Films with High Internal Quantum Efficiency and Fast Radiative Recombination Rates

In this work, we systematically investigated the <i>N</i><sub>x</sub> bonding defects that induced high photoluminescence internal quantum efficiencies (PL IQEs) and very fast radiative recombination processes in amorphous silicon oxynitride (a-SiN<sub>x</sub>O<...

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Bibliographic Details
Main Authors: Pengzhan Zhang, Leng Zhang, Xuefeng Ge, Sake Wang
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Materials
Subjects:
a-SiN<sub>x</sub>O<sub>y</sub>
N‒Si‒O defect states
photoluminescence internal quantum efficiency
radiative recombination rates
quasi-three-level systems
Online Access:https://www.mdpi.com/1996-1944/11/12/2494

Internet

https://www.mdpi.com/1996-1944/11/12/2494

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