Structural features of chalcogenide glass SiTe: An ovonic threshold switching material
The state-of-the-art phase-change memory is usually composed of ovonic threshold switching (OTS) material and ovonic memory switching (OMS) material for selective and data storage, respectively. OMS materials have been intensely studied, while the knowledge of the OTS mechanism is still inadequate....
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-08-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0059845 |