Investigation of SiO2 thin films dielectric constant using ellipsometry technique
In this paper, we studied the optical behavior of SiO2 thin films prepared via sol-gel route using spin coating deposition from tetraethylorthosilicate (TEOS) as precursor. Thin films were annealed at different temperatures (400-600oC). Absorption edge and band gap of thin layers were measured using...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Isfahan University of Technology
2014-11-01
|
| Series: | Iranian Journal of Physics Research |
| Subjects: | |
| Online Access: | http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-652&slc_lang=en&sid=1 |