Room temperature operation of InAsSb quantum dashes laser near 1.8 μm based on InP (001) substrate

Room temperature operation of InAsSb quantum dashes laser near 1.8 μm based on InP (001) substrate

Single-stack InAsSb self-assembled quantum dashes (QDashes) laser grown by metalorganic vapor phase epitaxy based on InP (001) substrate is reported. High-quality InAsSb quantum dashes have been acquired under the optimized growth conditions, such as substrate temperature, growth rate, deposition th...

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Bibliographic Details
Main Authors: Dongbo Wang, Ning Zhuo, Zenghui Gu, Yue Zhao, Fengmin Cheng, Jinchuan Zhang, Shenqiang Zhai, Junqi Liu, Shuman Liu, Fengqi Liu, Zhanguo Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2018-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5064698

Internet

http://dx.doi.org/10.1063/1.5064698

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