Room temperature operation of InAsSb quantum dashes laser near 1.8 μm based on InP (001) substrate

Single-stack InAsSb self-assembled quantum dashes (QDashes) laser grown by metalorganic vapor phase epitaxy based on InP (001) substrate is reported. High-quality InAsSb quantum dashes have been acquired under the optimized growth conditions, such as substrate temperature, growth rate, deposition th...

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Bibliographic Details
Main Authors: Dongbo Wang, Ning Zhuo, Zenghui Gu, Yue Zhao, Fengmin Cheng, Jinchuan Zhang, Shenqiang Zhai, Junqi Liu, Shuman Liu, Fengqi Liu, Zhanguo Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2018-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5064698

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