Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor

Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor

Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin semiconductor channel with large spin-orbit coupling (SOC). The emphasis of the ME spin field-effect transistors (ME spin FET)...

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Bibliographic Details
Main Authors: Peter A. Dowben, Christian Binek, Kai Zhang, Lu Wang, Wai-Ning Mei, Jonathan P. Bird, Uttam Singisetti, Xia Hong, Kang L. Wang, Dmitri Nikonov
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Magnetoelectric (ME) transistor
nonvolatile logic and memory
spin–orbit coupling (SOC)
Online Access:https://ieeexplore.ieee.org/document/8302839/

Internet

https://ieeexplore.ieee.org/document/8302839/

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